| 摘要 |
PROBLEM TO BE SOLVED: To remove a hard mask used for opening a connection hole without damages to a member present at a bottom part of the connection hole. SOLUTION: An insulating film 24, which is formed with the same layer as an information storage capacity element C, is formed in a peripheral circuit region of a semiconductor substrate 1. After the information storage capacity element C has been formed, an insulating film 30a and an SOG film 30b are formed to plararize a surface. Then, a hard mask 41 is formed, and connection holes 42 and 43 are opened using it. Further, after a resist film 44 has been formed on the entire surface of a semiconductor substrate 1, the resist film 4 is ashed for the resist film 44 so as to remain only in connection holes 42 and 43. Then, while a sidewall and a bottom part of the connection holes 42 and 43 are protected by the resist film 44, the hard mask 41 is etched and removed. |
