| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium nitride compound semiconductor laser which is capable of oscillating continuously and stably in a basic lateral mode, of low astigmatism, and low in threshold current density by a method wherein a light trapping layer whose refractive index is larger than that of a current injection part is provided to a current block layer, and furthermore the current injection part has a structure where it becomes gradually large in refractive index starting from its center toward ends. SOLUTION: The gallium nitride compound semiconductor laser of this invention has a structure where a quantum well structure active layer 107 whose refractive index is set larger at its periphery than at the center of its stripe, a P-GaN waveguide layer 108, and a P-AlGaN clad layer 109 are successively formed above an N-Al0.15 Ga0.85 N clad layer 103 and an N-GaN waveguide layer 104, a P-In0.1 Ga0.9 N current block layer 105 and an N-In0.1 Ga0.9 N current block layer 106 both large in refractive index are each formed on both the sides of the stripe, and furthermore a P-Al0.15 Ga0.85 N clad layer 110 is formed on all the surface. |
