| 摘要 |
A semiconductor memory device is capable of resetting a redundant bit line selection signal at high speed when an address signal is changed from a selective condition of a redundant bit line into a non-selective condition thereof. A semiconductor device for detecting that an input address is an address to be converted into a redundant bit line to cause a redundant bit line selection signal to become an active level, is comprised of: a control signal generating circuit for generating a control signal whose level is changed from a first level to a second level in synchronism with the change of the input address, and whose level becomes the first level after a predetermined time has elapsed; a charge circuit for electrically connecting a first power source terminal with a node when the control signal is at the first level, and for electrically connecting the node with a second power source terminal when the control signal is at the second level; selecting means for electrically connecting the node with the second power source terminal when the input address corresponds to any address other than the address to be converted into the redundant bit, and for prohibiting the electric connection made between the node and the second power source terminal when the input address corresponds to the address to be converted into the redundant bit; and storage means for storing therein data corresponding to the level of the node when the control signal is at the first level and for producing the redundant bit line selection signal in response to the data. <IMAGE> |
