MEMORY LOCATION ARRANGEMENT AND METHOD FOR PRODUCING THE SAME

摘要

According to the invention, the resistances connected between the word lines and the bit lines running crosswise thereto are more resistive than said word lines and bit lines. The bit lines are each connected to a read amplifier by which means the potential on the particular bit line can be adjusted to a reference potential. An output signal can also be picked off of said read amplifier. It is possible to read the value of the resistance allocated to an item of information from the output signal by selecting one word line and adjusting all other word lines to reference potential.