发明名称 |
PHOTOLITHOGRAPHY MASK USING SERIFS AND METHOD THEREOF |
摘要 |
There is disclosed a photolithography mask and method of making the same that utilizes serifs to increase the correspondence between an actual circuit design and the final circuit pattern on a semiconductor wafer. The mask uses a plurality of serifs having a size determined by a resolution limit of the optical exposure tool used during the fabrication process. The serifs are positioned on the corner regions of the mask such that a portion of surface area for each of the serifs overlaps the corner regions of the mask. The size of the serifs is about one-third the resolution limit of said optical exposure tool. About 33 to about 40 percent of the total surface area of the serifs overlap the corner regions of the mask. |
申请公布号 |
EP0902915(A1) |
申请公布日期 |
1999.03.24 |
申请号 |
EP19970926582 |
申请日期 |
1997.05.27 |
申请人 |
MICROUNITY SYSTEMS ENGINEERING, INC. |
发明人 |
CHEN, J., FUNG |
分类号 |
H01L21/027;G03F1/00;G03F1/36;G03F7/20 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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