Epitaxial wafer device including an active layer having a two-phase structure and light-emitting device using the wafer

摘要

An epitaxial wafer for a light-emitting device has a double hetero-structure and includes a single-crystal substrate, a lower cladding layer of AlGaN grown on the substrate, an active layer grown on the lower cladding layer, the active layer having a two-phase structure comprised of a matrix of AlxGayInzN and crystallets of AlaGabIncN, and an upper cladding layer of AlGaN grown on the active layer.