Epitaxial wafer for GaP pure green light-emitting diode and GaP pure green light-emitting diode

摘要

An epitaxial wafer for a GaP pure green light emitting diode includes an n-type single crystal GaP substrate formed in order thereon with a first n-type GaP epitaxial layer, a second n-type GaP epitaxial layer and a p-type GaP epitaxial layer. The p-type GaP epitaxial layer has a sulfur concentration of not greater than 1x1017 cm31 3, the second n-type GaP epitaxial layer has a carrier concentration on a side thereof interfacing with the p-type GaP epitaxial layer of 0.5-5x1017 cm-3, and the p-type GaP epitaxial layer has a carrier concentration on a side thereof interfacing with the second n-type GaP epitaxial layer that is 1-10x1017 cm-3 and is not less than twice the carrier concentration of the second n-type GaP epitaxial layer on the side thereof interfacing with the p-type GaP epitaxial layer. A GaP pure green light-emitting diode exhibiting high brightness includes the epitaxial wafer, an n-type electrode provided on a back surface of the single crystal substrate and a p-type electrode provided on the upper surface of the p-type GaP epitaxial layer.