| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high-density and high-grade silicon carbide sintered compact, having the electroconductivity and a high heat conductivity in combination and useful in various fields of the semiconductor industry, the electronic information equipment industry or the like. SOLUTION: This silicon carbide sintered compact is obtained by sintering a mixture of a silicon carbide powder with a nonmetallic sintering assistant and introducing nitrogen thereinto, has >=2.9 g/cm<3> density and contains >=150 ppm nitrogen. The volume resistivity of the silicon carbide sintered compact is preferably <=1 Ω.cm and the content of β-type silicon carbide in the silicon carbide component is preferably >=70%. A method for adding a nitrogen source represented by various amines such as hexamethylenetetramine, ammonia or triethylamine at the time of producing the raw material silicon carbide powder or a method for adding the nitrogen source together with the nonmetallic sintering assistant when producing the sintered compact is cited as the method for introducing the nitrogen into the sintered compact. |
