| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide structure, freed of warpage and uniform even in characteristic values without causing chipping when working. SOLUTION: (1) A silicon carbide sintered compact, prepared by sintering a mixture containing a silicon carbide powder uniformly mixed with a nonmetallic sintering assistant and having >=2.9 g/cm<3> density is further sintered at 1,700-2,400 deg. in an atmosphere of an inert gas. (2) The slicing working of the silicon carbide sintered compact, obtained by sintering a mixture of the silicon carbide powder uniformly mixed with the nonmetallic sintering assistant and having >=2.9 g/cm<3> density is carried out and the resultant slice is ground, further polished and then heat-treated at 1,700-2,400 deg.C in the atmosphere of the inert gas. |
