发明名称 Back bias voltage level detector
摘要 A back bias voltage level detector includes a reference voltage generator outputting a reference voltage having a constant voltage, a PMOS pull-up transistor coupled to the reference voltage generator and an external voltage and outputting a gate-source voltage of the PMOS pull-up transistor, an NMOS pull-down transistor coupled to the PMOS pull-up transistor and a back bias voltage and outputting a gate-source voltage of the NMOS pull-down transistor, a couple of inverters connected in series between the PMOS pull-up transistor and the NMOS pull-down transistor and outputting an oscillation enable signal, and a couple of resistors connected in series between the back bias voltage and a ground voltage and connected to the NMOS pull-down transistor.
申请公布号 US5886567(A) 申请公布日期 1999.03.23
申请号 US19970890601 申请日期 1997.07.09
申请人 LG SEMICON CO., LTD. 发明人 PARK, JIN-SEOG;KIM, TAE-HOON
分类号 H03F1/30;G01R19/165;(IPC1-7):G05F1/10 主分类号 H03F1/30
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