| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a semiconductor device which is improved in reliability against thermal stresses, by forming a plurality of insulating layers laminated upon another of an organic material matching the terminal expansion characteristic of a mounting substrate for mounting a semiconductor device. SOLUTION: A semiconductor device has a BGA substrate composed of a plurality of insulating layers 13 laminated upon another, a plurality of wiring 9 provided on the upper surface of each insulating layer 13, and a plurality of via holes 12 provided in the insulating layers 13 for electrically connecting the wiring 9 and a semiconductor chip 2 having a plurality of electrodes respectively connected to the wiring 9. The insulating layers 13 are formed of an organic material matching the thermal expansion characteristic of a mounting substrate for mounting the semiconductor device. Therefore, a highly reliable semiconductor device having such a BGA structure that the disconnection of solder bumps and peeling of semiconductor chips do not occur, even when thermal stresses are generated due to thermal expansion, can be obtained.</p> |
