发明名称 Semiconductor chip-making without scribing
摘要 A method for fracturing semiconductor crystal wafers or bars to form individual chips with active devices without the use of mechanical scribing of the crystal. The method involves forming where fracture is desired a shallow trench by etching in the semiconductor wafer or bar, preferably with sharp corners, or providing over where the fracture is desired the edges of a metallization layer, or both. Applying pressure will then cause the crystal to fracture as a result of strains formed in the crystal at the sharp corners or below the metallization edges. The method is particularly suitable for the fabrication of laser chips from compound semiconductors.
申请公布号 US5882988(A) 申请公布日期 1999.03.16
申请号 US19970950604 申请日期 1997.10.16
申请人 PHILIPS ELECTRONICS NORTH AMERICA CORPORATION 发明人 HABERERN, KEVIN W.;TIJBURG, RUDOLF P.;FLAMHOLTZ, SHARON J.
分类号 H01L21/301;H01L21/465;H01L21/78;H01S5/02;(IPC1-7):H01L21/301 主分类号 H01L21/301
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