| 摘要 |
PROBLEM TO BE SOLVED: To form a homogeneous highly dielectric film and, at the same time, to manufacture a semiconductor device which uses the homogeneous high dielectric film to improve its characteristics. SOLUTION: On an interlayer insulating film 11, a capacitor composed of a lower electrode 12, a dielectric film 13A, and an upper electrode is formed. The lower electrode 12 is made of polysilicon and has a bottomed cylindrical shape. The dielectric film 13a is formed by A MOCVD(metal organic CVD) method by using alkoxy organic tantalum and alkoxy organic titanium as raw materials, and is composed of a mixture of tantalum pentaoxide and titanium dioxide, the mixing ratio of which is adjusted to about 90 mol.% tantalum and 10 mol.% titanium, and has a uniform thickness of 10 nm in the peripheral section of the lower electrode 12 on the insulating film 11 and on the bottom face and internal and external side faces of the electrode 12. An upper electrode 14 is composed of titanium nitride and formed on the dielectric film 13A. |
