发明名称 LOW VOLTAGE DETECTING CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To correct the variation of the detection reference of a low voltage. SOLUTION: At the time of shipping one chip microcomputer, selection data for correcting the threshold voltage of an invertor in a first stage constituting a converting means are written in the specific address of a flash memory 17 by using each sample or lot as a unit. Thus, switch circuits 14-1-14-n and 15-1 and 15-n can be selectively opened and closed, P channel type MOS transistors 16-1-16-n can be selectively turned on/off, and the variation of the detection reference of a low voltage detecting circuit can be corrected.</p>
申请公布号 JPH1173253(A) 申请公布日期 1999.03.16
申请号 JP19970234454 申请日期 1997.08.29
申请人 SANYO ELECTRIC CO LTD 发明人 OSAWA HIROSHI
分类号 G01R19/165;G06F1/28;G11C16/06;(IPC1-7):G06F1/28 主分类号 G01R19/165
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