发明名称 |
Method for using oxygen plasma treatment on a dielectric layer |
摘要 |
The method for depositing a dielectric layer can be used to evenly deposit the dielectric layer to be applied to a semiconductor device. The method includes steps of: a) providing a substrate; b) depositing a first dielectric film on the subtrate; c) introducing an oxygen plasma for eliminating an uneven distribution of charges on a surface of the substrate; and d) forming a second dielectric film on the first dielectric film treated with the oxygen plasma for obtaining the dielectric layer having a uniform thickness on the substrate,
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申请公布号 |
US5883015(A) |
申请公布日期 |
1999.03.16 |
申请号 |
US19970887886 |
申请日期 |
1997.07.03 |
申请人 |
MOSEL VITELIC INC. |
发明人 |
LIAO, KENT;HUANG, DINOS;TU, TUBY;CHEN, KUANG-CHAO;SU, WEN-DOE |
分类号 |
C23C16/40;H01L21/314;H01L21/316;(IPC1-7):H01L21/316 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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