| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor laser wherein a leak current which flows by penetrating a PNPN block layer is reduced, distortion is low and temperature characteristics are excellent. SOLUTION: A pair of N-InP second buried layers 6 are formed. In the layers 6, an interval between surfaces mutually facing a mesa stripe-shaped part 30 which are arranged to the mesa stripe-shaped part 30 at a specified interval is widened toward the substrate side. The height position of the upper ends of the surfaces mutually facing the mesa stripe-shaped part 30 to the substrate 1 surface is lower than the height position of an active layer 3 by 0.5±0.5μm.
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