发明名称 NITRIDE SEMICONDUCTOR LASER ELEMENT
摘要 PROBLEM TO BE SOLVED: To make good a far-field pattern of a laser beam, by forming a light- impermeable film on one of the opposed end faces of an active layer which are resonance planes, other than the end faces of the active layer. SOLUTION: On a substrate 1, an n-layer 201 (n-contact layer, n-clad layer etc.), active layer 4, p-layer 202 (p-contact layer, p-clad layer etc.), are laminated, a reflection mirror 203 is formed on the entire resonance plane formed by the cleavage or etching. Further, a light-impermeable film 204 adjacent to this mirror 203 is formed on the n-layer end face and substrate end face. At this time, the film 204 is not formed on the active layer end face 113, and a laser beam amplified and induced in the active layer 4 is emitted from the end face 113. This improves a far-field pattern of the beam.
申请公布号 JPH1168256(A) 申请公布日期 1999.03.09
申请号 JP19970230537 申请日期 1997.08.27
申请人 NICHIA CHEM IND LTD 发明人 SANO MASAHIKO
分类号 H01L33/06;H01L33/32;H01L33/44;H01S5/00;H01S5/028;H01S5/323;H01S5/343 主分类号 H01L33/06
代理机构 代理人
主权项
地址