| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit capable of shortening a boost operating time for a memory cell wherein a threshold voltage is lowered at the time of a power-on resetting operation. SOLUTION: The threshold voltage of the memory cell of a memory cell array assigned by one unit of address stored in an address storage part 21 at the time of power-on resetting is detected with a sense amplifier 25. Whether the threshold voltage is the voltage wherein data volatilization is generated is judged with a judging circuit 25. In the case of the voltage wherein volatilization is generated, the threshold voltage is boosted into the voltage wherein data volatilization is not generated with a voltage generating circuit 28. In the case of the voltage wherein volatilization is not generated, 1 is added to respective addresses of the address storage part 21 with an address adding circuit 27.</p> |
