| 摘要 |
PROBLEM TO BE SOLVED: To improve throughput, to decrease stop time and to reduce contaminatins by omitting the requirement for taking out a substrate from a processing chamber between the deposition of the first layer and the deposition of the second layer when multilayered thin films are deposited on the substrate arranged in a processing chamber. SOLUTION: During the deposition process, the entire body of a process chamber 10 including a wall part 15a of a chamber main body surrounding an exhaust path 23 and a shield valve 24 is heated by plasma. By this heating, the condensation of unwanted reaction product is advantageously decreased or eliminated. Furthermore, when the material is condensed on the wall of a low-temperature vacuum path and moved to the process chamber when the gas does not flow and returned, the volatile product of the process gas, which can possibly contaminate the process, and other contaminated material are swept away and discharged. Furthermore, the part between two layers is controlled by the transition between chemical materials and the related process parameter of the materials. It is not necessary to execute the intermediate step for taking out the substrate between the depositions. |
