| 摘要 |
<p>PROBLEM TO BE SOLVED: To surely prevent breaking of pattern wiring at the connection section of the exposure field during switching exposure by exposing with a mask for exposure adding an auxiliary pattern to one side of the pattern end of the connection section of the mask for exposure. SOLUTION: The auxiliary triangle patterns 101 and 102 are formed on the opposite side of a wiring pattern 206 in relation to one another and the width of the auxiliary patterns 101 and 102 are formed gradually wider in a direction to its end. A wire width y of the wiring pattern 206 is set to about 0.25μm on the semiconductor substrate, a length of x section of the added auxiliary pattern 101 and 102 is set to about 0.2μm on the same, and a width of the connection margin 205 is set to about 0.50μm on the same. This process is applied to a positive type resist process and the shaded portion is entirely composed of chromium film on the reticle. The breaking of the pattern wiring at the field connection can be prevented.</p> |
