| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulating material exhibiting heat resistance, specific dielectric constant and O2 -plasma resistance suitable for producing interlaminar insulating films, and to provide its precursor. SOLUTION: This precursor polymer composition comprises a polyorgnosiloxazane containing the formulas: (RSiN3 ), (RSiN2 O, (RSiNO2 ) and (RSiO3 ) (R is an alkyl, an alkenyl, a cycloalkyl, an aryl, an alkylamino or an alkylsilyl) as main repeating units and having a number-average mol.wt. of 400-100,000, and a polyorganosilazane or perhydropolysilazane in an amount of 1-50 wt.% based on the polyorganosiloxazane. The insulating material is obtained by baking the composition. |
