| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method by which a resist pattern excellent in the dimensional accuracy and in the cross section is formed without producing an intermixing layer between a resist compsn. layer and an antireflection film. SOLUTION: A compsn. soln. to form an antireflection film containing (A) a compd. which crosslinks by irradiation of active rays and (B) a dye is applied on a substrate to form a coating film. The whole surface of the coating film is irradiated with active rays to form an antireflection film. Then a resist soln. is applied on the antireflection film and dried to form a resist layer, which is then subjected to lithographic treatment to form a resist pattern on the antireflection film.
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