SILICON CARBIDE SUBSTRATE, PROCESS FOR PRODUCING THE SAME, AND SEMICONDUCTOR ELEMENT CONTAINING SILICON CARBIDE SUBSTRATE

摘要

A thin silicon carbide film is epitaxially grown by MBE etc. on the silicon carbide crystal growth surface (1a) of a substrate (1) while keeping silicon atoms (2) present in excess relative to carbon atoms. Thus, a silicon carbide substrate with a satisfactory crystalline state can be formed at a low temperature with good reproducibility. This growth is possible even at temperatures not higher than 1300 DEG C, and it is possible to form a heavily doped film, a selectively grown film, and a film comprising cubic silicon carbide grown over hexagonal crystals. When cubic silicon carbide is crystallized on hexagonal crystals, the use of an off-cut substrate having a plane slanting to the direction (numeral 1) is effective in preventing twin generation.