| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent contamination of a semiconductor device due to impurities by sealing impurities in an aluminum nitride(AlN) sintered body which is excellent in various characteristics but has much impurities, to improve the production yield of a device, and to provide an AlN composite base body, AlN heat generating body, AlN electrostatic chuck, and AlN electrostatic chuck with a heater, each having excellent heat resistance, corrosion resistance, high thermal response and ferroelectric properties. SOLUTION: This AlN composite base body is used for an AlN composite heat generating body, electrostatic chuck and electrostatic chuck with a heater, and the base body consists of an AlN sintered body and an SiC coating layer formed on the surface of the sintered body by vapor deposition(CVD) method. The AlN composite heat generating body has an SiC conductive layer heater pattern formed by CVD method on the surface of an AlN sintered body. The AlN composite electrostatic chuck has an SiC conductive electrode pattern formed by CVD method on the surface of an AlN sintered body. The AlN composite electrostatic chuck with a heater has an SiC heater pattern by CVD method on one surface of an AlN sintered body and has an SiC electrode pattern formed by CVD method on the other surface.</p> |
