发明名称 Exposure apparatus
摘要 A scanning type exposure apparatus, which is used to expose a wafer with an image of a pattern on a reticle by synchronously moving the reticle and the wafer, comprises a second gas conditioner for circulating a temperature-controlled gas in a subsidiary chamber which encloses an optical path of an interferometer for measuring a position of a reticle stage. The apparatus comprises a third gas conditioner for supplying a temperature-controlled gas to an internal space of a pedestal including a wafer stage and an optical path of an interferometer for measuring a position of the wafer stage. A positional error of the stage, which would be otherwise caused by temperature-dependent fluctuation of the gas on the optical path of the interferometer, is reduced. A heat insulating material is installed on a top plate of the pedestal so as to intercept heat transfer from a heat source on the pedestal to the internal space of the pedestal. A tube may be arranged in the pedestal so that a temperature of the pedestal is adjusted by allowing a temperature-controlled fluid to flow therethrough.
申请公布号 US5877843(A) 申请公布日期 1999.03.02
申请号 US19960707218 申请日期 1996.09.03
申请人 NIKON CORPORATION 发明人 TAKAGI, SHIN-ICHI;IWATA, NAOHIKO
分类号 G03F7/20;(IPC1-7):G03B27/42;G03B27/52 主分类号 G03F7/20
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