发明名称 Semiconductor device and method of manufacturing the same
摘要 A semiconductor substrate made of silicon or the like and having an active region is used as part of a package. Bumps are formed on a major surface of the semiconductor substrate. One end of each lead is connected to a corresponding bump, and the other end of the lead is located outside the major surface of the semiconductor substrate. An adhesive such as a thermoplastic resin is applied to the major surface of the semiconductor substrate. An upper substrate is located on the adhesive. The upper substrate is made of a metal plate, an insulating plate, or a semiconductor substrate. The upper substrate covers at least the active region of the semiconductor substrate, the bumps, and the lead portions on the semiconductor substrate.
申请公布号 US5877478(A) 申请公布日期 1999.03.02
申请号 US19940304607 申请日期 1994.09.12
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ANDO, TOMOYUKI
分类号 H01L23/02;H01L23/34;H01L23/495;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/02
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