Space-efficient MDQ switch placement

摘要

A semiconductor memory having a plurality of memory cells arranged in rows and columns includes a bank of sense amplifiers disposed in a first generally rectangular region having a length parallel to said rows, with each sense amplifier in the bank disposed in a sense amplifier region between a pair of complementary bit lines of an associated column. An MDQ switch being located in a sense amplifier region occupying a corresponding row-wise space to the at least one driver to provide space efficient placement thereof.