MANUFACTURE OF HIGH DIELECTRIC CAPACITOR

摘要

PROBLEM TO BE SOLVED: To improve electric characteristics of a capacitor, and at the same time, improve step coverage of a high dielectric film, by annealing a capacitor cell unit which is constituted of high dielectric containing an amorphous state and formed on a semiconductor substrate, and crystallizing a high dielectric film containing an amorphous state. SOLUTION: A high dielectric film containing an upper electrode film and an amorphous state is anisotropically dry-etched by using a specified mask pattern 122, and a capacitor cell unit which is isolated by the respective cell block units constituted of an upper electrode film pattern 120A, a high dielectric film pattern 118A, a lower electrode film pattern 116A, and a diffusion preventing film pattern 114A is formed. After the mask pattern 122 is eliminated, the high dielectric film pattern containing an amorphous state is crystallized by annealing the capacitor cell unit, a crystallized high dielectric film pattern is formed, and a capacitor cell unit is completed. Thereby permittivity of the capacitor is increased, and at the same time, leakage current is reduced.