COMPOUND SEMICONDUCTOR DEVICE BASED ON GALLIUM NITRIDE

摘要

A compound semiconductor device based on gallium nitride which can have a thick gallium nitride semiconductor layer serving to prevent cracks or defects attributable to a strain caused by a difference in lattice constant or coefficient of thermal expansion. Between a contact layer (4) consisting of a film of n-type GaN and a clad layer (5) consisting of a film of a n-type AlyGa1-yN is interposed a crack-preventive buffer layer (5) having both of the compositions of the two films.