摘要 |
PROBLEM TO BE SOLVED: To provide a polishing pad of long life in a chemical-mechanical polishing(CMP) technique, as well as to polish uniformly a whole surface of a polished film on a semiconductor wafer at stable polishing speed. SOLUTION: After a surface of a polishing pad 4 is ground by the first dressor 5 with embedded diamond particles to achieve flatness, a surface of a polished film on a semiconductor wafer 1 is polished, and a sodding grain on a surface of the polishing pad 4 is set up simultaneously by the second dressor 6 composed of a cylindrical brush 7 while supplying a polishing abrasive solution through a supplying nozzle 10 so as to restore an original coarse sodding grain. |