发明名称 |
Method for forming vias in a dielectric film |
摘要 |
Vias are formed in a dielectric film overlying an electrode layer by sweeping a laser beam over the area in which the via is to be formed. In particular, a Nd:YAG laser, producing a beam of light having a 266 nm wave length, effectively ablates a barium strontium titanate dielectric film, without adversely affecting an underlying platinum electrode. The present invention overcomes the problem of wet chemical etching of dielectric films to form vias. Wet chemical etching often requires etchants that adversely affect the underlying metal electrode and typically require the use of environmentally undesirable chemicals.
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申请公布号 |
US5874369(A) |
申请公布日期 |
1999.02.23 |
申请号 |
US19960761028 |
申请日期 |
1996.12.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FAROOQ, MUKTA SHAJI;LAPLANTE, MARK JOSEPH |
分类号 |
H01L21/02;H01L21/768;(IPC1-7):C03C25/06 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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