High voltage component especially ignition system thyristor

摘要

A high voltage component has a self-supporting n-doped semiconductor wafer with two or more series-connected sub-components, at least one of which has a p-region extending from the front face to the back face of the wafer. An Independent claim is also included for production of the above component by forming uniformly spaced-apart, parallel, stripe-like p-regions in a lightly n-doped semiconductor component, the p-regions extending from the front face to the back face of the wafer and dividing the wafer into parallel lightly n-doped regions.