| 摘要 |
PROBLEM TO BE SOLVED: To reduce the space factor of a resistance element having a large resistance in a semiconductor device having polycide gate electrode. SOLUTION: A dummy gate electrode 117d constituted of an N<+> -type polycrystalline silicon film pattern 111d and a tungsten silicide film pattern 116d is provided on the surface of a field insulating film 107 in parallel. A resistance element 122d (constituted of a second N<+> -type polycrystalline silicon film pattern) orthogonal to the gate electrode through silicon oxide film cap 118d and a silicon oxide film spacer 121d, which cover the upper face and the side of the gate electrode 117d, is provided. |
