NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain data reading characteristic not influenced by variation of the power supply voltage by respectively connecting a non-volatile semiconductor memory cell to the bit line connected to the negative terminal of a differential sense amplifier and a capacitor of the same capacitance as the bit line to the positive terminal and then supplying a first and a second reference voltage to the negative and positive terminals. SOLUTION: A node NA is connected to one negative terminal of a differential type sense amplifier 2 and a flash memory transistor Q1 is connected to the bit line BL connected to the node NA. Moreover, a capacitor Cd having the same capacitance as the bit line BL is connected to the node NB connected to the other positive terminal of the differential type sense amplifier 2. A reference voltage generating circuit 1 supplies the reference voltage Vref 1 and Vref 2 to the node NA and NB and therefore it is no longer required to provide the reference cell for data reading. Thereby, characteristic of differential type sense amplifier 2 and drain disturb characteristic of transistor Q1 due to variation of the power supply voltage can be improved.