发明名称 STRUCTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To surely improve bonding property of a metal wire to a barrier metal, by forming a thin gold layer on the barrier metal, wire bonding the metal wire to the gold layer, and alloying the thin gold layer in respect of both the barrier metal and the metal wire. SOLUTION: A protection film 2d for covering several kinds of circuit elements formed on an upper surface of a main IC chip is formed on each electrode pad 2c for wire bonding with an opening being provided therein. Further, a barrier metal 2e is formed on a portion of the wire bonding electrode pad 2c. Preceding wire bonding, the surface of the barrier metal 2e formed on the portion of the wire bonding pad 2c is subjected to flash plating so as to form a thin gold layer 2e' thereon. Thereafter, a ball portion 5a formed at an end of a metal wire 5 is pressed onto the thin gold layer 2e' for bonding. In this way, the thin gold layer 2e' is alloyed in respect of both the barrier metal 2e and the metal wire 5.
申请公布号 JPH1140601(A) 申请公布日期 1999.02.12
申请号 JP19970195560 申请日期 1997.07.22
申请人 ROHM CO LTD 发明人 SHIBATA KAZUTAKA
分类号 H01L25/18;H01L21/60;H01L25/065;H01L25/07 主分类号 H01L25/18
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