SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device of new structure which is high in both the operating performance and reliability. SOLUTION: In a semiconductor device which takes advantage of a crystal semiconductor thin film, formed on a substrate 106 possessed of an insulating surface, impurities are locally injected into an active region 102 for the formation of a pinning region 104. The pinning region 104 restrains a depletion layer from expanding from a drain side, so as to prevent a short channel effect effectively. Since a channel forming region 105 is intrinsic or substantially intrinsic, high mobility is realized.