发明名称 |
Reticle, pattern transferred thereby, and correction method |
摘要 |
A reticle that allows deviation in rotation and magnification of an exposure region detected just using a wafer subjected to exposure and development without having to provide an underlying pattern, a pattern transferred using such a reticle, and a correction method are achieved. A first measurement pattern is provided on a dicing line pattern of the X axis direction. Also, a second measurement pattern is formed on a line of extension of the first measurement pattern in the Y axis direction. Similarly, a third measurement pattern is formed on the dicing line pattern in the Y axis direction. A fourth measurement pattern is provided corresponding to the third measurement pattern.
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申请公布号 |
US5868560(A) |
申请公布日期 |
1999.02.09 |
申请号 |
US19970940946 |
申请日期 |
1997.09.30 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TAMADA, NAOHISA;KAWACHI, TOSHIHIDE;MIYAMOTO, YUKI |
分类号 |
G03F1/08;G03F7/20;G03F9/00;H01L21/027;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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