| 发明名称 |
Method for dry-etching using gaseous bismuth halide compound |
| 摘要 |
The present invention provides a method for dry-etching a solid surface with a gaseous bismuth halide compound, which permits achivement of a simple and perfect dry-process for manufacturing of electoric devices, quantum devices etc., giving a high reproducibility.
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| 申请公布号 |
US5869400(A) |
申请公布日期 |
1999.02.09 |
| 申请号 |
US19960655182 |
申请日期 |
1996.05.30 |
| 申请人 |
RESEARCH DEVELOPMENT CORPORATION OF JAPAN |
发明人 |
KANEKO, TADAAKI;KAWAMURA, TAKAAKI |
| 分类号 |
C23F1/12;C23F4/00;H01L21/302;H01L21/306;H01L21/3065;(IPC1-7):B44C1/22 |
主分类号 |
C23F1/12 |
| 代理机构 |
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