| 摘要 |
A memory device having a plurality of memory arrays. Each array has a plurality of memory cells, each memory cell including an electrode defining a respective contact area. Each memory array is formed by depositing a continuous chalcogenide layer. This chalcogenide layer, even when continuous, will have active areas formed above the electrodes, and a conductive layer electrically coupling at least a portion of the active areas. The memory array can also include a dielectric volume surrounding at least a portion of the plurality of electrodes. The electrodes can be contacts, plugs or pillars deposited in etched openings in the dielectric volume.
|
