| 摘要 |
PROBLEM TO BE SOLVED: To obtain the subject single crystal appropriately used as a substrate for epitaxial growth in the manufacture of a green light emitting device that causes no reduction in luminance by adjusting the concn. of Si and O, both of which exist as impurities in the substrate for epitaxial growth, to values within specified ranges respectively. SOLUTION: In this compound semiconductor single crystal used as a substrate for epitaxial growth, the concn. of Si and O, both of which exist as impurities in the substrate, are adjusted so as to meet the relational expressions, (Si concn.) <1×10<17> atoms/cm<3> and (O concn.) <7×10<16> atoms/cm<3> , respectively. A liquid phase epitaxial growth equipment 2 is provided with a quartz reaction tube 4 in which a boat 6 for epitaxial growth is placed. The boat 6 is provided on its inside with: a substrate holder 8 for setting several, for example five GaP substrates W1 to W5 on it in the longitudinal direction; suveral, several, for example, five growth solution reservoirs 10a to 10e placed in front of the substrate holder 8 so as to correspond to the GaP substrates W1 to W5 , respectively; and also, a solution receiving boat 12. |
