发明名称 |
PIEZOELECTRIC ELEMENT UNIT AND ITS MANUFACTURE |
摘要 |
PROBLEM TO BE SOLVED: To provide a low cost protection layer which is capable of having a resistance to a film forming condition in a hydrothermal synthesis method for a PZT and superior in edge coverage without having pin holes. SOLUTION: A whole surface of a silicon substrate as a substrate 13 not including titanium is covered with a nickel protection layer 15a having a thickness of roughly 5 μm by electroless plating. A titanium layer 91 is formed on a portion where a PZT layer 92 is to be selectively formed by a mask vapor deposition method and the PZT layer 92 is formed on the portion by a hydrothermal method. An electrode 93 is formed on the face of the PZT layer 92 by a mask vapor deposition method. The cost of the nickel protection layer 15a is lower than that of the other metallic layer. It is possible to form a thick layer by plating and the layer becomes a protection layer superior in edge coverage without having pin holes. It is possible to form a bimorph having a small thickness from the nickel protection layer 15a and PZT layer 92. |
申请公布号 |
JPH1134326(A) |
申请公布日期 |
1999.02.09 |
申请号 |
JP19970198693 |
申请日期 |
1997.07.24 |
申请人 |
FUJI ELECTRIC CO LTD |
发明人 |
FUKAZAWA NAOTO;UCHIDA SHINJI |
分类号 |
B41J2/045;B41J2/055;B41J2/135;B41J2/14;B41J2/16;H01L41/09;H01L41/22;H02N2/00 |
主分类号 |
B41J2/045 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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