发明名称 RESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To obtain a resist compsn. capable of being exposured with an ArF excimer laser and forming a stable and excellent pattern by incorporating a specified polymer compd. and a compd. which produces acid by irradiation of ionizing radiation. SOLUTION: The resist compsn. contains a polymer compd. containing a group having a oxycarbonyl structure expressed by the formula which leaves by the reaction with an acid, and a compd. which produces an acid by exposure to ionization radiation. In the formula, p is 0 or 1, R<1> , R<2> are independently 1-7C aliphatic hydrocarbon groups or 1-7C aliphatic hydrocarbon groups substituted with alkoxy groups, silyl groups, etc., R<3> , R<4> are independently hydrogen atoms, 1-7C aliphatic hydrocarbon groups, alkoxycarbonyl groups, or 1-7C aliphatic hydrocarbon groups substituted with polar groups such as halogen atoms. The polymer compd. used is a resin insoluble with an alkali developer. As for the compd. which produces an acid by exposure to ionization radiation, an onium salt is used.
申请公布号 JPH1124274(A) 申请公布日期 1999.01.29
申请号 JP19970195065 申请日期 1997.07.04
申请人 NIPPON ZEON CO LTD 发明人 SONE ATSUSHI
分类号 G03F7/039;C08F20/28;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/039
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