| 摘要 |
PROBLEM TO BE SOLVED: To prevent reduced short-circuit between a diebond material and an electrode by providing a conductive part where such electric potential as higher than that of a diebond material is applied on a chip. SOLUTION: Between a conductive diebond material 8 which contains Ag an electrode 3 where such electric potential as lower than the diebond material 8 is applied, such electrode region 6 as Au plating is formed so as to enclose the electrode 3. Application of such electric potential as higher than the diebond material 8 causes Ag ion in the diebond material to be attracted to the electrode 3 for moving, so that the migration phenomenon of Ag is prevented, thus the short-circuit between the diebond material 8 and the electrode 3 is prevented from occurring. In short, since the metal plating region 6 where such electric potential as higher than the diebond material is applied is formed between the diebond material 8 and the electrode 3, an electric field in the direction opposite to that between the diebond material 8 and the electrode 3 occurs. As a result, movement of the Ag ion which is positive ion I prevented, and the occurrence of a short-circuit caused by formation of a linear metal Ag between the diebond material 8 and the electrode 3 is prevented. |
