发明名称 |
PZT THIN-FILM BIMORPH PARALLEL PLATE STRUCTURE AND ITS MANUFACTURE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a parallel plate structure of a thin-film bimorph which can obtain a large displacement when used as an actuator. SOLUTION: A parallel plate structure 1 is arranged so that piezo electric elements 2 as a pair of bimorph structures are fixed as opposed each other with an insulating spacer 3 of a rectangular column shape disposed therebetween at both upper and lower ends of the elements 2. The element 2 of the bimorph structure includes a base plate 4 of titanium, PZT thin films 5 having a thickness of several tens ofμm and formed by a hydrothermal synthesis method on both sides of the base plate 4, and a pair of electrode films 6 of aluminum having a thickness of severalμm and formed on the thin films 5.</p> |
申请公布号 |
JPH1126834(A) |
申请公布日期 |
1999.01.29 |
申请号 |
JP19970179599 |
申请日期 |
1997.07.04 |
申请人 |
FUKUDA TOSHIO;ARAI FUMITO;TOKAI RIKA CO LTD |
发明人 |
FUKUDA TOSHIO;ARAI FUMITO;ITOIGAWA KOICHI;IWATA HITOSHI |
分类号 |
C30B7/10;C30B29/32;H01L41/09;H01L41/39;H03H3/02 |
主分类号 |
C30B7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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