| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and manufacture thereof which permits the storage node capacity to be increased to improve the soft error resistance. SOLUTION: A GND wiring 14b is formed on a first wiring layer including a storage node 11c through a dielectric film 12, thereby forming a capacity element of the storage node with the node 11c, film 12 and wiring 14b. The first wiring layers are disposed symmetrically to the center of a memory cell, and memory cells are disposed adjacent in the extensions of word lines 5a, 5b in the same layout. |
