| 摘要 |
<p>A liquid precursor containing barium, strontium, and titanium, is applied to a first electrode (28, 55), dried in air at a first temperature of 160 °C and then a second temperature of 400 °C, and annealed at a temperature of 800 °C in nitrogen to form a thin film (30, 60) of barium strontium titanate. A second electrode (32, 77) is deposited and the device (10, 70) is patterned to form a capacitor (16, 72), and a second anneal is performed at a temperature of 800 °C in nitrogen. In this manner, a high electronic quality thin film (30, 60) of barium strontium titanate is fabricated without a high-temperature oxygen anneal.</p> |
