发明名称 SEMICONDUCTOR DEVICE MANUFACTURING EQUIPMENT AND METHOD OF DRIVING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To avoid a vortical flow by relaxing the pressure difference between a low-vacuum load lock chamber and high-vacuum process chamber when a gate valve is opened. SOLUTION: A gate valve 30 is disposed between a load lock chamber 10 and a process chamber 18 and coupled with an air feed source 36 through an air feed line 53 composed of an opening line 32 and closing line 34 and opens or closes a high-vacuum line 44 to control the flow of an exhaust gas a depending an the pressure of an air over a specified rate, selectively fed through the lines 32, 34, thereby adjusting the flow of the air passing over the opening line through a delay valve 40 for a specified rate. This adjustment relaxes the pressure difference between the load lock chamber 10 and the process chamber 18.</p>
申请公布号 JPH1126552(A) 申请公布日期 1999.01.29
申请号 JP19980077712 申请日期 1998.03.25
申请人 SAMSUNG ELECTRON CO LTD 发明人 YO JUNSHOKU;SHA KUN;CHAE SEUNG-KI
分类号 H01L21/677;C23C14/56;H01L21/00;H01L21/02;(IPC1-7):H01L21/68 主分类号 H01L21/677
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