| 摘要 |
PROBLEM TO BE SOLVED: To form a capacitor in a semiconductor body without additional adverse effects on the structure, without removing a part of a pad silicon oxide layer, during the etching for removing a bottom part of glass. SOLUTION: While a semiconductor body 10 is heated which has a doped film deposited on the semiconductor body 10 and the dopant in the doped film is diffused into a region 30 of the semiconductor body 10, a liquid phase interface region is produced between the semiconductor body 10 and the doped film, this interface region is restored to solid phase by cooling the interface region, a dielectric film 26 is formed on the doped region 30, and doped material is deposited on the dielectric film 26. |
