| 摘要 |
Deposition of a Ta2O5 dielectric layer on a nitridable substrate is carried out by (a) cleaning the substrate surface with a low or medium pressure cold gas plasma, preferably of H2, H2/Ar or O2; (b) growing a nitride barrier layer using a low or medium pressure cold N2/H2 gas plasma; and (c) depositing the dielectric layer by CVD or PECVD. Preferably, the substrate consists of a semiconductive or conductive material or a polymer with polar groups, especially silicon or silicon oxide. |
