Electrode of n-type nitride semiconductor, semiconductor device having the electrode, and method of fabricating the same

摘要

The present invention provides an electrode making good ohmic contact with an n-type nitride semiconductor without requiring heat treatment at high temperature, wherein an aluminum layer, a silicon layer, a nickel layer and a gold layer are laminated in this order on an n-type gallium nitride based semiconductor, to form an n-type electrode. <IMAGE>